Агент ST | Агент чипов ST | Агентская серия ST Почтовый ящик: [email protected]

транзистор мощности

Агентская серия ST
Модель Производитель Упаковка Цифры Описание PDF RoHS Запрос
STP20N95K5 STMicroelectronics TO-220 2180
N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-220 package
STP2N80K5 STMicroelectronics TO-220 2180
N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package
STW21N150K5 STMicroelectronics TO-247 2180
N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 packge
STL140N4LLF5 STMicroelectronics PowerFLAT 5x6 2180
N-channel 40 V, 0.00275 Ohm, 32 A, PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET
STP80NF10 STMicroelectronics Ecopack2 2180
N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET
STD6NF10T4 STMicroelectronics Ecopack2 2180
N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET
STB30NF10T4 STMicroelectronics Ecopack2 2180
N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET
STS5DNF60L STMicroelectronics SO-8 2180
Dual N-channel 60V - 0.045Y - 4A - SO-8 STripFET? Power MOSFET
STL220N6F7 STMicroelectronics PowerFLAT 5x6 2180
N-channel 60 V, 0.0012 Ohm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STL50N6F7 STMicroelectronics PowerFLAT 5x6 2180
N-channel 60 V, 9 mOhm typ., 60 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STD40NF10 STMicroelectronics DPAK 2180
N-channel 100 V, 0.025 Ohm typ., 50 A STripFET II Power MOSFET in a DPAK package
STH270N8F7-6 STMicroelectronics H2PAK-6 2180
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
STP100N6F7 STMicroelectronics TO-220 2180
N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
STH410N4F7-6AG STMicroelectronics H2PAK-6 2180
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
STH145N8F7-2AG STMicroelectronics H2PAK-2 2180
Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
STD45N10F7 STMicroelectronics DPAK 2180
N-channel 100 V, 14.5mOhm typ., 45 A, STripFET F7 Power MOSFETs in DPAK, I2PAK and TO-220 packages
STD26NF10 STMicroelectronics DPAK 2180
N-channel 100V - 0.033Ohm - 25A - DPAK
STP17NF25 STMicroelectronics TO-220 2180
N-channel 250 V, 140 mOhm typ., 17 A STripFET II Power MOSFET in a TO-220 package
STD64N4F6AG STMicroelectronics DPAK 2180
Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFET F6 Power MOSFET in a DPAK package
STF40NF20 STMicroelectronics TO-220FP 2180
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
STB120N4F6 STMicroelectronics D2PAK 2180
N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package
STL10N3LLH5 STMicroelectronics PowerFLAT 3.3x3.3 2180
N-channel 30 V, 0.015 Ohm, 9 A, PowerFLAT(TM) 3.3x3.3 STripFET(TM) V Power MOSFET
STGWA40HP65FB2 STMicroelectronics NEC 1982
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
STGSH80HB65DAG STMicroelectronics NEC 1982
Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
STGWA30IH65DF STMicroelectronics TO-247 long leads 1982
Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 long leads package
STGD7NB60ST4 STMicroelectronics DPAK 1982
7 A, 600 V, low drop IGBT
STGWA15M120DF3 STMicroelectronics TO-247 long leads 1982
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
STGW30NC60VD STMicroelectronics TO-247 long leads 1982
40 A, 600 V, fast IGBT with UltraFAST diode
STGF20M65DF2 STMicroelectronics TO-220FP 1982
Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGB7NC60HDT4 STMicroelectronics D2PAK 1982
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
STGD6NC60H-1 STMicroelectronics IPAK 1982
N-channel 600 V, 7 A very fast IGBT
STGF14NC60KD STMicroelectronics TO-220FP 1982
14 A, 600 V short-circuit rugged IGBT
STGB8NC60KDT4 STMicroelectronics D2PAK 1982
8 A, 600 V short-circuit rugged IGBT
STGP19NC60SD STMicroelectronics TO-220 1982
20 A, 600 V fast IGBT with Ultrafast diode
STGW20V60F STMicroelectronics TO-247 1982
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
STGB30H65DFB2 STMicroelectronics D2PAK 1982
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
STGWA80H65FBAG STMicroelectronics TO-247 long leads 1982
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
STG15M120F3D8 STMicroelectronics DICE SAWN T&R 1982
1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D8 packing
STGB25N36LZAG STMicroelectronics D2PAK 1982
Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ
STG25M120F3D7 STMicroelectronics D.SCRIB.100% VI STAT 1982
1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing
STGB10NB40LZT4 STMicroelectronics D2PAK 1982
Automotive-grade 10 A, 410 V internally clamped IGBT
STGW30NC120HD STMicroelectronics TO-247 1982
N-channel 1200 V, 30 A very fast PowerMESH IGBT
STGP20H60DF STMicroelectronics TO-220 1982
600 V, 20 A high speed trench gate field-stop IGBT
STGW25M120DF3 STMicroelectronics TO-247 1982
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
STGW20IH125DF STMicroelectronics TO-247 1982
1250 V, 20 A IH series trench gate field-stop IGBT
STGW40H120DF2 STMicroelectronics TO-247 1982
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
STGB10M65DF2 STMicroelectronics D2PAK 1982
Trench gate field-stop IGBT M series, 650 V 10 A low loss
STGB4M65DF2 STMicroelectronics D2PAK 1982
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Услуги
Персонализация и уход со стороны специалистов
Реальная гарантия.
Долгосрочное сотрудничество с поставщиками мирового уровня
Единый шопинг.
Передача в режиме реального времени больших инвентарных данных
Лучшая логистика
Быстрая доставка по всему миру